Title :
Visible sub-60-femtosecond dye laser with GaAs based semiconductor saturable absorber mirror
Author :
Noh, Y.C. ; Lim, Y.S. ; Lee, J.H. ; Chang, J.S.
Author_Institution :
Dept. of Phys., Seoul Nat. Univ., South Korea
fDate :
7/20/2000 12:00:00 AM
Abstract :
A GaAs based semiconductor saturable absorber mirror (SESAM) has been fabricated using molecular beam epitaxy and applied to a hybridly modelocked Rh6G dye laser. The generated pulse was as short as 56 fs at the centre wavelength of 580 nm, which shows the shortest centre wavelength in these kinds of dye laser
Keywords :
III-V semiconductors; dye lasers; dyes; gallium arsenide; laser beams; laser mirrors; laser mode locking; molecular beam epitaxial growth; optical fabrication; optical pulse generation; optical saturable absorption; 56 fs; 580 nm; 60 fs; GaAs; GaAs based semiconductor saturable absorber mirror; Rhodamine 6G dye laser; centre wavelength; dye laser; fabrication; generated pulse; hybridly modelocked dye laser; molecular beam epitaxy; pulse generation; saturable absorber mirror; semiconductor saturable absorber mirror; visible sub-femtosecond dye laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000936
