• DocumentCode
    1366068
  • Title

    1.5 μm up-conversion device

  • Author

    Liu, H.C. ; Gao, M. ; Poole, P.J.

  • Author_Institution
    Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
  • Volume
    36
  • Issue
    15
  • fYear
    2000
  • fDate
    7/20/2000 12:00:00 AM
  • Firstpage
    1300
  • Lastpage
    1301
  • Abstract
    An epitaxially integrated 1.5 to 1 μm up-conversion device is reported. The device consists of a serially connected In0.53Ga0.47As photodiode and InAs0.1P 0.9 light emitting diode grown on InP. The device operation relies first on detecting a 1.5 μm signal by the photodiode and secondly on driving the emitter by the resulting photocurrent, thus achieving the up-conversion
  • Keywords
    III-V semiconductors; gallium arsenide; image convertors; indium compounds; light emitting diodes; optical frequency conversion; photodiodes; 1 micrometre; 1.5 micrometre; In0.53Ga0.47As; InAs0.1P0.9; epitaxially integrated device; light emitting diode; photocurrent; serially connected photodiode; up-conversion device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000915
  • Filename
    856220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1366068