DocumentCode :
1366068
Title :
1.5 μm up-conversion device
Author :
Liu, H.C. ; Gao, M. ; Poole, P.J.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Volume :
36
Issue :
15
fYear :
2000
fDate :
7/20/2000 12:00:00 AM
Firstpage :
1300
Lastpage :
1301
Abstract :
An epitaxially integrated 1.5 to 1 μm up-conversion device is reported. The device consists of a serially connected In0.53Ga0.47As photodiode and InAs0.1P 0.9 light emitting diode grown on InP. The device operation relies first on detecting a 1.5 μm signal by the photodiode and secondly on driving the emitter by the resulting photocurrent, thus achieving the up-conversion
Keywords :
III-V semiconductors; gallium arsenide; image convertors; indium compounds; light emitting diodes; optical frequency conversion; photodiodes; 1 micrometre; 1.5 micrometre; In0.53Ga0.47As; InAs0.1P0.9; epitaxially integrated device; light emitting diode; photocurrent; serially connected photodiode; up-conversion device;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000915
Filename :
856220
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1366068
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