DocumentCode :
1366074
Title :
A closed form analytical model for the electrical properties of microstrip interconnects
Author :
Bogatin, Eric
Author_Institution :
Xinix Inc., Santa Clara, CA, USA
Volume :
13
Issue :
2
fYear :
1990
fDate :
6/1/1990 12:00:00 AM
Firstpage :
258
Lastpage :
266
Abstract :
A simple model is presented based on closed-form analytical approximations for the resistance, capacitance, inductance, and conductance of a generic microstrip interconnect. Working in the frequency domain, all the low-frequency lumped circuit and high-frequency transmission line properties can be calculated. As examples, this model is applied to high-frequency reflectivity measurements on Teflon and FR4 printed circuit board microstrips. Agreement to better than 5% up to 1 GHz is obtained by using a dielectric constant of 2.20 and dissipation factor of 0.004 for the Teflon boards and a dielectric constant of 4.9 at 1 MHz with a constant dissipation factor of 0.022 for the FR4 microstrips. This model enables packaging engineers to evaluate the possibilities of an interconnect technology very simply on their personal computers (PCs)
Keywords :
circuit CAD; glass fibre reinforced plastics; polymers; printed circuit design; strip lines; transmission line theory; 1 MHz to 1 GHz; FR4 PCBs; FR4 microstrips; Teflon PCBs; Teflon boards; capacitance; closed form analytical model; conductance; dielectric constant; dissipation factor; electrical properties; frequency domain; high-frequency reflectivity measurements; high-frequency transmission line properties; inductance; interconnect technology; low-frequency lumped circuit; microstrip interconnects; packaging engineers; permittivity; personal computers; printed circuit board microstrips; resistance; Analytical models; Capacitance; Dielectric constant; Distributed parameter circuits; Electric resistance; Frequency domain analysis; Inductance; Integrated circuit interconnections; Microstrip; Reflectivity;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/33.56155
Filename :
56155
Link To Document :
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