DocumentCode :
1366081
Title :
InP-based 1300 nm microcavity LEDs with 9% quantum efficiency
Author :
Depreter, B. ; Moerman, I. ; Baets, R. ; Van Daele, P. ; Demeester
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Volume :
36
Issue :
15
fYear :
2000
fDate :
7/20/2000 12:00:00 AM
Firstpage :
1303
Lastpage :
1304
Abstract :
InP-based microcavity light emitting diodes (MCLEDs) operating at a wavelength of 1300 nm are reported. An output power of 3.8 mW and total external quantum efficiency of 9% are reported. These values are to the best of the authors´ knowledge the highest ever reported for an InP-based MCLED
Keywords :
III-V semiconductors; indium compounds; light emitting diodes; 1300 nm; 3.8 mW; 50 mA; 9 percent; InP; InP-based microcavity LEDs; light emitting diodes; quantum efficiency;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000943
Filename :
856222
Link To Document :
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