Title :
A novel lossy and dispersive interconnect model for integrated circuit simulation
Author :
Yuan, Jiann-shiun ; Eisenstadt, William R. ; Liou, Juin J.
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
A method of modeling first-level metal interconnect signal transmission on silicon substrates with arbitrary doping profiles has been developed. The novel interconnect model includes the effects of signal attenuation and signal dispersion encountered in fast transient waveform propagation. Analytical modeling and PISCES device simulation are used for interconnect model development. SPICE simulation of the model shows good agreement with measurements
Keywords :
VLSI; digital integrated circuits; integrated circuit technology; metallisation; transmission line theory; PISCES device simulation; SPICE simulation; Si substrates; analytical modeling; arbitrary doping profiles; dispersive interconnect model; fast transient waveform propagation; first-level metal interconnect; integrated circuit simulation; lossy interconnect; signal attenuation; signal dispersion; signal transmission; Analytical models; Circuit simulation; Conducting materials; Dispersion; Frequency; Integrated circuit interconnections; Integrated circuit modeling; SPICE; Semiconductor process modeling; Silicon;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
