A novel lossy and dispersive interconnect model for integrated circuit simulation

Author

Yuan, Jiann-shiun ; Eisenstadt, William R. ; Liou, Juin J.

Author_Institution

Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA

Volume

13

Issue

2

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

275

Lastpage

280

Abstract

A method of modeling first-level metal interconnect signal transmission on silicon substrates with arbitrary doping profiles has been developed. The novel interconnect model includes the effects of signal attenuation and signal dispersion encountered in fast transient waveform propagation. Analytical modeling and PISCES device simulation are used for interconnect model development. SPICE simulation of the model shows good agreement with measurements

Keywords

VLSI; digital integrated circuits; integrated circuit technology; metallisation; transmission line theory; PISCES device simulation; SPICE simulation; Si substrates; analytical modeling; arbitrary doping profiles; dispersive interconnect model; fast transient waveform propagation; first-level metal interconnect; integrated circuit simulation; lossy interconnect; signal attenuation; signal dispersion; signal transmission; Analytical models; Circuit simulation; Conducting materials; Dispersion; Frequency; Integrated circuit interconnections; Integrated circuit modeling; SPICE; Semiconductor process modeling; Silicon;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.56157

Filename

56157