Title :
Reducing source and drain resistances in InGaP/InGaAs doped-channel HFETs using δ-doping Schottky layer
Author :
Chiu, H.C. ; Chien, F.-T. ; Yang, S.C. ; Kuo, C.W. ; Chan, Y.-J.
Author_Institution :
Dept. of Electr. Eng., Feng Chia Univ., Taichung, Taiwan
fDate :
7/20/2000 12:00:00 AM
Abstract :
InGaP/InGaAs/GaAs dual doped-channel field-effect transistors (DCFETs) have been fabricated and demonstrated in terms of their DC, RF, and power performances. These performances can be improved by inserting a δ-doping layer on top of the undoped Schottky layer, which can reduce the ohmic contact resistances of DCFETs
Keywords :
III-V semiconductors; contact resistance; doping profiles; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; δ-doping Schottky layer; DC performance; InGaP-InGaAs-GaAs; RF performance; delta-doped layer; doped-channel HFETs; drain resistance reduction; dual doped-channel FET; field-effect transistors; ohmic contact resistance reduction; power performance; source resistance reduction; undoped Schottky layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000905
