Title :
Variation in intrinsic parameters of transistor with gate width
Author :
Ariaudo, M. ; Bourdel, E. ; Pasquet, D.
Author_Institution :
ENSEA, EMO, Cergy Pontoise, France
fDate :
7/20/2000 12:00:00 AM
Abstract :
A method is developed that allows the intrinsic parameters of a transistor with a wide gate to be evaluated, taking the effects of propagation into account. It is shown that these parameters are not linearly related to the gate width. The proposed method provides a new transistor model that can be implemented in a circuit simulation
Keywords :
circuit simulation; field effect transistors; semiconductor device models; circuit simulation; gate width; intrinsic parameters; propagation effects; transistor model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000900
