DocumentCode
1366173
Title
Variation in intrinsic parameters of transistor with gate width
Author
Ariaudo, M. ; Bourdel, E. ; Pasquet, D.
Author_Institution
ENSEA, EMO, Cergy Pontoise, France
Volume
36
Issue
15
fYear
2000
fDate
7/20/2000 12:00:00 AM
Firstpage
1323
Lastpage
1325
Abstract
A method is developed that allows the intrinsic parameters of a transistor with a wide gate to be evaluated, taking the effects of propagation into account. It is shown that these parameters are not linearly related to the gate width. The proposed method provides a new transistor model that can be implemented in a circuit simulation
Keywords
circuit simulation; field effect transistors; semiconductor device models; circuit simulation; gate width; intrinsic parameters; propagation effects; transistor model;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000900
Filename
856235
Link To Document