• DocumentCode
    1366280
  • Title

    Influence of contact contour on breakdown behavior in vacuum under uniform field

  • Author

    Zhang, Yingyao ; Liu, Zhiyuan ; Cheng, Shaoyong ; Yang, Lanjun ; Geng, Yingsan ; Wang, Jimei

  • Author_Institution
    State Key Lab. of Electr. Insulation & Power Equip., Xi´´an Jiaotong Univ., Xi´´an, China
  • Volume
    16
  • Issue
    6
  • fYear
    2009
  • fDate
    12/1/2009 12:00:00 AM
  • Firstpage
    1717
  • Lastpage
    1723
  • Abstract
    We experimentally investigated the influence of contact contour on breakdown characteristics in vacuum under uniform field. Four vacuum interrupters were used and their contact contours were designed to obtain an effective area (Seff) from 211 mm2 to 550 mm2. The contact parameters were contact diameter 42.8 mm, contact gap 6 mm, contact thickness 16 mm and contact material CuCr50. Basic impulse level (BIL) voltage (1.2 × 50 ¿s) was applied. Experimental results revealed that the effective area Seff had a significant influence on the conditioning process. The larger the effective area was, the slower the conditioning process was. When the breakdown voltage saturated, the breakdown probability distribution followed a Weibull distribution. The shape parameter that represented the breakdown voltage scatter was constant, independent of the effective area. The effective area (Seff) had no significant influence on the breakdown voltage under a uniform field in vacuum.
  • Keywords
    Weibull distribution; vacuum interrupters; Weibull distribution; basic impulse level voltage; breakdown behavior; breakdown probability distribution; contact contour; vacuum interrupters; Breakdown voltage; Contacts; Dielectrics and electrical insulation; Electric breakdown; Interrupters; Laboratories; Optimization methods; Shape; Vacuum breakdown; Weibull distribution; Vacuum, breakdown characteristics, uniform field, effective area, Weibull distribution;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2009.5361595
  • Filename
    5361595