Title :
Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry
Author :
Carbonetto, Sebastián H. ; Inza, Mariano A García ; Lipovetzky, José ; Redin, Eduardo G. ; Salomone, Lucas Sambuco ; Faigón, Adrián
Author_Institution :
Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
Abstract :
In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.
Keywords :
MIS devices; dosimeters; dosimetry; radiation effects; semiconductor counters; MOS devices; MOS dosimetry; ZTC current; ZTC method; ionizing radiation sensors; radiation effects; semiconductor dosimeters; temperature fluctuations; zero temperature coefficient; Dosimetry; Error compensation; Ionizing radiation sensors; MOS devices; Radiation effects; Temperature; Temperature measurement; Dosimetry; MOS devices; ionizing radiation sensors; radiation effects; temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2170430
