Title :
Gap-Type a-Si TFTs for Front Light Sensing Application
Author :
Tai, Ya-Hsiang ; Chou, Lu-Sheng ; Chiu, Hao-Lin
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap-gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.
Keywords :
amorphous semiconductors; elemental semiconductors; lighting; liquid crystal displays; photoconductivity; photodetectors; silicon; thin film sensors; thin film transistors; Si:H; TFT LCD panel; backlight source; display panel; front light sensing application; gap-gate type hydrogenated amorphous silicon thin film transistor; gap-type amorphous silicon TFT; illuminations; light sensor; photocurrent degradation; photosensitivity; Amorphous silicon; Degradation; Lighting; Sensors; Thin film transistors; Amorphous gap–gate thin-film transistor (TFT); light sensor;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2011.2164054
