DocumentCode :
1366498
Title :
Thermooptic interferometric switches fabricated by electron beam irradiation of silica-on-silicon
Author :
Syahriar, Ary ; Syms, Richard R A ; Tate, Thomas J.
Author_Institution :
Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Volume :
16
Issue :
5
fYear :
1998
fDate :
5/1/1998 12:00:00 AM
Firstpage :
841
Lastpage :
846
Abstract :
The thermal stability of channel optical waveguide devices fabricated by electron beam irradiation of plasma-enhanced chemical vapor deposition (PECVD) silica-on-silicon is investigated. The degree of stability is dependent on the starting material and on the use of thermal annealing prior to irradiation. High-temperature postprocessing is shown to reduce modal confinement, increasing losses in waveguide bends and the coupling coefficient in directional couplers. A low-temperature cladding process based on a thick MgF2 layer is described, and low-loss thermooptic Mach-Zehnder interferometric switches are demonstrated
Keywords :
Mach-Zehnder interferometers; electron beam deposition; integrated optics; integrated optoelectronics; optical directional couplers; optical fabrication; optical switches; plasma CVD; silicon compounds; silicon-on-insulator; thermal stability; thermo-optical effects; CVD; MgF2; SiO2-Si; channel optical waveguide devices; coupling coefficient; electron beam irradiation; high-temperature postprocessing; low-loss thermooptic Mach-Zehnder interferometric switches; low-temperature cladding process; modal confinement; optical directional couplers; plasma-enhanced chemical vapor deposition; silica-on-silicon; starting material; thermal annealing; thermal stability; thermooptic interferometric switch fabrication; thick MgF2 layer; waveguide bend losses; Electron beams; Electron optics; Optical devices; Optical interferometry; Optical switches; Optical waveguides; Plasma chemistry; Plasma confinement; Plasma stability; Thermal stability;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.669015
Filename :
669015
Link To Document :
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