• DocumentCode
    1366502
  • Title

    Defect Reduction in ArF Immersion Lithography Using Particle Trap Wafers With CVD Thin Films

  • Author

    Matsui, Yoshinori ; Onoda, Naka ; Nagahara, Seiji ; Uchiyama, Takayuki

  • Author_Institution
    Process Technol. Div., NEC Electron. Corp., Sagamihara, Japan
  • Volume
    22
  • Issue
    4
  • fYear
    2009
  • Firstpage
    438
  • Lastpage
    442
  • Abstract
    Particle trap wafers were applied to ArF immersion lithography to reduce the immersion-related defectivity. Interfacial free energy (gammaA-particle) and work of adhesion (WA-particle) between particle trap wafers and particles in immersion water explain the potential of trapping particles by the particle trap wafers. It was found that the treated SiCN chemical vapor deposition wafer performed well as a particle trap wafer and can help defect reduction in immersion lithography.
  • Keywords
    CVD coatings; adhesion; carbon compounds; cleaning; free energy; immersion lithography; silicon compounds; surface energy; ArF immersion lithography; CVD thin films; SiCN; adhesion; chemical vapor deposition wafer; cleaning wafer; defect reduction; interfacial free energy; particle trap wafers; ArF Immersion lithography; cleaning wafer; defect; particle;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2009.2031760
  • Filename
    5235107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1366502