• DocumentCode
    1366578
  • Title

    Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility

  • Author

    Jones, R. ; Chugg, AM ; Jones, C.M.S. ; Duncan, P.H. ; Dyer, C.S. ; Sanderson, C.

  • Author_Institution
    Space Dept., DERA, Farnborough, UK
  • Volume
    47
  • Issue
    3
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    539
  • Lastpage
    544
  • Abstract
    A new pulsed laser facility has been developed to extend laser testing techniques to generate upset cross-section curves. The objective has been to establish an economical laser-based bulk screening capability for SEE susceptibility
  • Keywords
    SRAM chips; integrated circuit testing; ion beam effects; laser beam effects; SEE cross-section; SRAM; ion beam testing; picosecond pulsed laser testing; Ion beams; Microchip lasers; Neutrons; Optical arrays; Optical microscopy; Optical pulse generation; Optical pulses; Radiation effects; Random access memory; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.856477
  • Filename
    856477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1366578