Title :
Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility
Author :
Jones, R. ; Chugg, AM ; Jones, C.M.S. ; Duncan, P.H. ; Dyer, C.S. ; Sanderson, C.
Author_Institution :
Space Dept., DERA, Farnborough, UK
fDate :
6/1/2000 12:00:00 AM
Abstract :
A new pulsed laser facility has been developed to extend laser testing techniques to generate upset cross-section curves. The objective has been to establish an economical laser-based bulk screening capability for SEE susceptibility
Keywords :
SRAM chips; integrated circuit testing; ion beam effects; laser beam effects; SEE cross-section; SRAM; ion beam testing; picosecond pulsed laser testing; Ion beams; Microchip lasers; Neutrons; Optical arrays; Optical microscopy; Optical pulse generation; Optical pulses; Radiation effects; Random access memory; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
