DocumentCode
1366611
Title
Micro-irradiation experiments in MOS transistors using synchrotron radiation
Author
Autran, J.-L. ; Masson, P. ; Freud, N. ; Raynaud, C. ; Rickel, C.
Author_Institution
INSA de Lyon, Villeurbanne, France
Volume
47
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
574
Lastpage
579
Abstract
Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements
Keywords
MOSFET; X-ray effects; semiconductor device measurement; semiconductor device reliability; synchrotron radiation; MOS transistors; X-ray synchrotron radiation; charge pumping measurements; current-voltage measurements; electrical properties; gate electrode; micrometer resolution; optical characterization; quasi-breakdown measurements; spatially-resolved total-dose degradation; Charge measurement; Charge pumps; Current measurement; Degradation; Electric variables measurement; Electrodes; MOSFETs; Spatial resolution; Stimulated emission; Synchrotron radiation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.856482
Filename
856482
Link To Document