DocumentCode
1366623
Title
Spatial and spectral oxide trap distributions in power MOSFETs
Author
Torres, A. ; Flament, O. ; Marcandella, C. ; Musseau, O. ; Leray, J.L.
Author_Institution
CEA/DAM, Bruyeres-Le-Chatel, France
Volume
47
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
587
Lastpage
591
Abstract
Charge trapping features of power MOSFET oxide are investigated by irradiation and post irradiation methods. We determine the spectral and the spatial trap distribution in the oxide of four hardened and unhardened devices. One unhardened device seems to present a trapping behavior close to the SIMOX buried oxide type
Keywords
X-ray effects; hole traps; power MOSFET; radiation hardening (electronics); MOSFET oxide; hardened devices; hole traps; irradiation methods; post irradiation methods; power MOSFETs; spatial oxide trap distributions; spectral oxide trap distributions; trapping behavior; unhardened devices; Annealing; Electron traps; Frequency; Ionizing radiation; MOS devices; MOSFETs; Manufacturing; Radiation hardening; Temperature; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.856484
Filename
856484
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