Title :
Response of MOSFETs from DMILL technology to high total dose levels
Author :
Armani, J.M. ; Brisset, C. ; Joffre, F. ; Dentan, M.
Author_Institution :
LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
We have investigated the response of MOS transistors fabricated using the DMILL process and irradiated to a total dose of 1 MGy(Si) with a 60Co source. Results show that parameter shifts remain limited, thus authorizing use of this technology in environments involving very high levels of radiation
Keywords :
MOSFET; gamma-ray effects; 1 MGy; DMILL technology; MOSFET; gamma ray irradiation; radiation response; total dose; Accidents; Coolants; Electronics industry; Inductors; MOS devices; MOSFETs; Protection; Silicon on insulator technology; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
