Title :
Use of commercial VDMOSFETs in electronic systems subjected to radiation
Author :
Picard, C. ; Brisset, C. ; Quittard, O. ; Marceau, M. ; Hoffmann, A. ; Joffre, F. ; Charles, J.-P.
Author_Institution :
LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
This study explores the effectiveness of pre-irradiation as a hardening technique for COTS components used in electronic power systems. This technique greatly improves the radiation tolerance of VDMOSFETs in such systems, whereby a small change in Rdson is observed
Keywords :
leakage currents; power MOSFET; radiation effects; radiation hardening (electronics); COTS components; commercial VDMOSFETs; electronic power systems; hardening technique; irradiated electronic systems; pre-irradiation; radiation tolerance; Electron traps; Fabrication; IEEE members; Industrial power systems; MOS devices; MOSFETs; Nuclear electronics; Radiation hardening; Testing; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
