• DocumentCode
    1366665
  • Title

    Use of commercial VDMOSFETs in electronic systems subjected to radiation

  • Author

    Picard, C. ; Brisset, C. ; Quittard, O. ; Marceau, M. ; Hoffmann, A. ; Joffre, F. ; Charles, J.-P.

  • Author_Institution
    LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
  • Volume
    47
  • Issue
    3
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    627
  • Lastpage
    633
  • Abstract
    This study explores the effectiveness of pre-irradiation as a hardening technique for COTS components used in electronic power systems. This technique greatly improves the radiation tolerance of VDMOSFETs in such systems, whereby a small change in Rdson is observed
  • Keywords
    leakage currents; power MOSFET; radiation effects; radiation hardening (electronics); COTS components; commercial VDMOSFETs; electronic power systems; hardening technique; irradiated electronic systems; pre-irradiation; radiation tolerance; Electron traps; Fabrication; IEEE members; Industrial power systems; MOS devices; MOSFETs; Nuclear electronics; Radiation hardening; Testing; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.856490
  • Filename
    856490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1366665