Title :
Radiation hardening of power MOSFETs using electrical stress
Author :
Picard, C. ; Brisset, C. ; Quittard, O. ; Hoffmann, A. ; Joffre, F. ; Charles, J.-P.
Author_Institution :
LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
Application of high voltage electrical stresses to NVDMOSFET-type COTS transistors was explored as an original hardening option. Such pre-irradiation treatment enhances transistor response to total dose
Keywords :
power MOSFET; radiation hardening; COTS component; NVDMOSFET; high voltage electrical stress; power MOSFET; radiation hardening; total dose; Electron traps; Electronic components; Gamma rays; IEEE members; Interface states; MOSFET circuits; Power industry; Radiation hardening; Stress; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
