Title :
Radiation tolerance of npn bipolar technology with 30 GHz Ft
Author :
Flament, O. ; Synold, S. ; de Pontcharra, J. ; Nie, S.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
The tolerance to both ionizing dose and displacement damage of a Quasi-Self Aligned (QSA) single polysilicon emitter bipolar technology fabricated with a 0.35 μm design rule CMOS is presented. In this work we explore the effect of dose rate, high dose level irradiation and elevated temperature irradiation on the electrical performance of single polysilicon bipolar transistors. The different results are discussed and comparison with previous results are presented to place the technology with respect to others
Keywords :
BiCMOS integrated circuits; elemental semiconductors; radiation hardening (electronics); silicon; 0.35 micron; 30 GHz; BiCMOS; Si; design rule; displacement damage; dose rate; electrical performance; elevated temperature irradiation; ionizing dose; npn bipolar technology; quasi-self aligned single polysilicon emitter; radiation tolerance; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Degradation; Doping; Frequency; Germanium silicon alloys; Ionizing radiation; Silicon germanium; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
