Title :
Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN
Author :
Gill, K. ; Azevedo, C. ; Batten, J. ; Cervelli, G. ; Grabit, R. ; Jensen, F. ; Troska, J. ; Vasey, F.
Author_Institution :
EP Div., CERN, Geneva, Switzerland
fDate :
6/1/2000 12:00:00 AM
Abstract :
The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80°C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; neutron effects; p-i-n photodiodes; particle detectors; semiconductor device reliability; semiconductor device testing; semiconductor lasers; 1310 nm; 4000 h; 80 degC; CERN; Compact Muon Solenoid experiment; InGaAs; InGaAsP; ageing tests; edge-emitting lasers; laser threshold; neutron effects; p-i-n leakage current; photocurrent; photodiodes; radiation damage; thermally accelerated ageing; wearout related degradation; Accelerated aging; Current measurement; Degradation; Indium gallium arsenide; Leakage current; Life testing; Mesons; PIN photodiodes; Photoconductivity; Solenoids;
Journal_Title :
Nuclear Science, IEEE Transactions on
