Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

Author

Gill, K. ; Azevedo, C. ; Batten, J. ; Cervelli, G. ; Grabit, R. ; Jensen, F. ; Troska, J. ; Vasey, F.

Author_Institution

EP Div., CERN, Geneva, Switzerland

Volume

47

Issue

3

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

667

Lastpage

674

Abstract

The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80°C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment

Keywords

III-V semiconductors; ageing; gallium arsenide; indium compounds; neutron effects; p-i-n photodiodes; particle detectors; semiconductor device reliability; semiconductor device testing; semiconductor lasers; 1310 nm; 4000 h; 80 degC; CERN; Compact Muon Solenoid experiment; InGaAs; InGaAsP; ageing tests; edge-emitting lasers; laser threshold; neutron effects; p-i-n leakage current; photocurrent; photodiodes; radiation damage; thermally accelerated ageing; wearout related degradation; Accelerated aging; Current measurement; Degradation; Indium gallium arsenide; Leakage current; Life testing; Mesons; PIN photodiodes; Photoconductivity; Solenoids;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.856496

Filename

856496