DocumentCode :
1366758
Title :
Diode-Pumped Passively Q-Switched 
Laser at 1330 nm With  and passively Q-switched Nd:(Lu<sub>0.1</sub>Gd<sub>0.9</sub>)<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> (Nd:LGGG) laser at 1330 nm were realized for the first time. The maximum CW output power of 0.93 W was obtained under the absorbed pump power of 11 W, corresponding to the slope efficiency of 10.4. By using V<sup>3+</sup>:YAG crystal as an absorber for passively Q-switching operation, the maximum average output power of 167 mW was generated with the minimum pulsewidth of 15.6 ns and the maximum repetition rate of 10 kHz. The corresponding signal pulse energy and pulse peak power were calculated to be 16.7 μJ and 1.1 kW, respectively.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Q-switching; neodymium; optical pumping; optical saturable absorption; semiconductor lasers; solid lasers; vanadium; yttrium compounds; (Lu<sub>0.1</sub>Gd<sub>0.9</sub>)<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub>:Nd; YAG:V<sup>3+</sup>; diode-end-pumped continuous wave passively Q-switched laser; energy 16.7 muJ; frequency 10 kHz; power 0.93 W; power 1.1 kW; power 11 W; power 167 mW; pulse peak power; saturable absorber; signal pulse energy; time 15.6 ns; wavelength 1330 nm; Couplers; Crystals; Laser excitation; Laser modes; Power generation; Pump lasers; Semiconductor lasers; <formula formulatype=)
${rm Nd}{:}({rm Lu}_{0.1}{rm Gd}_{0.9})_{3}{rm Ga}_{5}{rm O}_{12}$ ; ${rm V}^{3+}{:}{rm YAG}$
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2174353
Filename :
6068221
Link To Document :
