DocumentCode
1366765
Title
Single event upsets in the dual-port-board SRAMs of the MPTB experiment
Author
Barak, J. ; Barth, J.L. ; Seidleck, C.M. ; Marshall, C.J. ; Marshall, P.W. ; Carts, M.A. ; Reed, R.A.
Author_Institution
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Volume
47
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
712
Lastpage
717
Abstract
The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates
Keywords
SRAM chips; ion beam effects; space vehicle electronics; CREME96 model; M65656; MPTB experiment; dual-port-board SRAM; figure of merit model; ground testing; ion irradiation; single event upset; space radiation environment; Belts; Extraterrestrial measurements; Orbital calculations; Protons; Random access memory; Satellites; Semiconductor device measurement; Single event transient; Single event upset; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.856503
Filename
856503
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