DocumentCode
1366831
Title
Characterization of silicon pixel detectors with the n+/n/p+ and double-sided multiguard ring structure before and after neutron irradiation
Author
Cho, H.S. ; Xie, X.B. ; Chien, CY ; Liang, G.W. ; Huang, Wei ; Dezillie, B. ; Eremin, V. ; Li, Z.
Author_Institution
Dept. of Phys. & Astron., Johns Hopkins Univ., Baltimore, MD, USA
Volume
47
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
772
Lastpage
776
Abstract
The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon pixel detectors with the n+/n/p + and double-sided multiguard ring structure. Electrical characterization of such devices was performed before and after irradiation to neutron fluences (1 MeV equivalent) up to 6×1014 n/cm2, measuring leakage current, potential distribution over the guard rings and full depletion voltage. Studies on the radiation hardness using oxygen-enriched silicon substrates are being presented separately
Keywords
leakage currents; neutron effects; silicon radiation detectors; CERN LHC; Si; double-sided multiguard ring structure; full depletion voltage; leakage current; n+/n/p+ multiguard ring structure; neutron irradiation; oxygen-enriched silicon substrates; potential distribution; radiation hardness; radiation-induced damage; radiation-tolerant CMS forward pixel sensors; severe radiation environment; silicon pixel detectors; Collision mitigation; Current measurement; Electric variables measurement; Large Hadron Collider; Leakage current; Neutrons; Performance evaluation; Radiation detectors; Sensor phenomena and characterization; Silicon radiation detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.856513
Filename
856513
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