DocumentCode
1366874
Title
An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors
Author
García-Sánchez, Francisco J. ; Ortiz-Conde, Adelmo
Author_Institution
Solid State Electron. Lab., Univ. Simon Bolivar, Caracas, Venezuela
Volume
59
Issue
1
fYear
2012
Firstpage
46
Lastpage
50
Abstract
A new explicit model for long-channel nanocrystalline zinc oxide thin-film transistors is presented. The proposed equation is fully explicit by virtue of its use of the Lambert function. Consequently, the drain current can be directly calculated without the need of numerical iteration or approximations. Additionally, the proposed equation is analytically differentiable, allowing the straightforward derivation of explicit expressions for the transconductance and the output conductance of these devices.
Keywords
nanostructured materials; thin film transistors; Lambert function; drain current; explicit analytic compact model; long-channel nanocrystalline zinc oxide thin-film transistor; output conductance; transconductance; Approximation methods; Equations; Logic gates; Mathematical model; Thin film transistors; Zinc oxide; Disordered semiconductors; MOSFET compact modeling; ZnO thin-film transistors (TFTs);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2170993
Filename
6068238
Link To Document