• DocumentCode
    1366874
  • Title

    An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors

  • Author

    García-Sánchez, Francisco J. ; Ortiz-Conde, Adelmo

  • Author_Institution
    Solid State Electron. Lab., Univ. Simon Bolivar, Caracas, Venezuela
  • Volume
    59
  • Issue
    1
  • fYear
    2012
  • Firstpage
    46
  • Lastpage
    50
  • Abstract
    A new explicit model for long-channel nanocrystalline zinc oxide thin-film transistors is presented. The proposed equation is fully explicit by virtue of its use of the Lambert function. Consequently, the drain current can be directly calculated without the need of numerical iteration or approximations. Additionally, the proposed equation is analytically differentiable, allowing the straightforward derivation of explicit expressions for the transconductance and the output conductance of these devices.
  • Keywords
    nanostructured materials; thin film transistors; Lambert function; drain current; explicit analytic compact model; long-channel nanocrystalline zinc oxide thin-film transistor; output conductance; transconductance; Approximation methods; Equations; Logic gates; Mathematical model; Thin film transistors; Zinc oxide; Disordered semiconductors; MOSFET compact modeling; ZnO thin-film transistors (TFTs);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2170993
  • Filename
    6068238