Title :
Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET
Author :
Fazzi, A. ; Pignatel, G.U. ; Betta, G. F Dalla ; Boscardin, M. ; Varoli, V. ; Verzellesi, G.
Author_Institution :
Politecnico di Milano, Italy
fDate :
6/1/2000 12:00:00 AM
Abstract :
“On-chip” electronics fabricated on 6 KΩ cm high resistivity wafer is fully characterized and spectroscopic measurements carried out. A new charge sensitive circuit is introduced to amplify the hole signals with on-chip n-channel JFETs and without any resetting devices. The JFET gate-source junction is forward biased and the drain current is stabilized by a low frequency feedback on the JFET p+ well contact (used as a buried gate for the JFET). Preliminary setups with PIN diodes and tetrode n-JFETs are successfully tested. With about 5 pF total input capacitance, resolution of 86 rms electrons at 223 K with 10 μs shaping time is obtained. With about 3 pF, 60 rms electrons at 298 K with 10 μs are obtained
Keywords :
JFET integrated circuits; X-ray detection; X-ray spectrometers; nuclear electronics; p-i-n photodiodes; preamplifiers; silicon radiation detectors; JFET gate-source junction; Si; charge preamplifier; charge sensitive circuit; high resistivity wafer; hole collecting PIN diode; integrated tetrode N-JFET; low frequency feedback; on-chip electronics; resetting devices; shaping time; spectroscopic measurements; total input capacitance; Charge measurement; Conductivity; Current measurement; Electrons; Feedback; Frequency; Integrated circuit measurements; JFETs; Preamplifiers; Spectroscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
