A Ka-Band Low Noise Amplifier Using Forward Combining Technique

Author

Yu, Yueh-Hua ; Hsu, Wei-Hong ; Chen, Yi-Jan Emery

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

20

Issue

12

fYear

2010

Firstpage

672

Lastpage

674

Abstract

This letter presents a wideband low noise amplifier (LNA) implemented in 0.15 μm InGaAs pHEMT technology. The forward combining technique is proposed to boost the amplifier gain at Ka band. Through gain enhancement, the noise characteristic of the amplifier can also be reduced. The Ka-band LNA exhibits a very wide 3 dB bandwidth from 29 to 44 GHz with the power gain of 14.2 dB. The measured noise figure varies between 2.0 and 3.3 dB from 26.5 to 40 GHz. The supply voltage of the circuit is 1.2 V and the power consumption is 38 mW. The overall chip size is 650 μm×720 μm.

Keywords

circuit noise; high electron mobility transistors; low noise amplifiers; microwave amplifiers; millimetre wave amplifiers; wideband amplifiers; InGaAs; Ka-band low noise amplifier; LNA; amplifier gain; forward combining technique; frequency 26.5 GHz to 44 GHz; gain enhancement; noise figure; pHEMT technology; size 0.15 mum; voltage 1.2 V; wideband low noise amplifier; Indium gallium arsenide; Low-noise amplifiers; Noise measurement; PHEMTs; Semiconductor device measurement; Wideband; Feed forward; Ka band; low noise amplifier (LNA); pHEMT; wideband;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2085425

Filename

5617295