100 GHz Parametric CMOS Frequency Doubler

Author

Zhao, Zhixing ; Bousquet, Jean-François ; Magierowski, Sebastian

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada

Volume

20

Issue

12

fYear

2010

Firstpage

690

Lastpage

692

Abstract

A parametric MOS varactor-based integrated frequency doubler is reported. The circuit is implemented in 130 nm CMOS but uses a conservative 0.35 μm gate length and produces an output between 94 and 108 GHz with a minimum measured conversion loss of 14.5 dB and a maximum output power of -7.5 dBm. Slow-wave transmission line filters are employed to reduce circuit loss and the area required by the chip.

Keywords

CMOS integrated circuits; MOS capacitors; field effect MIMIC; frequency multipliers; microwave parametric devices; millimetre wave filters; millimetre wave frequency convertors; terahertz wave devices; transmission lines; varactors; accumulation-mode MOS varactor; circuit loss; conversion loss; frequency 94 GHz to 108 GHz; gate length; parametric CMOS frequency doubler; parametric MOS varactor-based integrated frequency doubler; size 0.35 mum; size 130 nm; slow-wave transmission line filters; CMOS integrated circuits; Millimeter wave technology; Schottky diodes; Varactors; CMOS; frequency multiplier; millimeter-wave; parametric circuit;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2010.2079921

Filename

5617298