Reliability investigation of InGaP/GaAs heterojunction bipolar transistors

Author

Bahl, Sandeep R. ; Camnitz, Lovell H. ; Houng, Denny ; Mierzwinski, Marek

Author_Institution

Hewlett-Packard Co., Palo Alto, CA, USA

Volume

17

Issue

9

fYear

1996

Firstpage

446

Lastpage

448

Abstract

During elevated-temperature bias stress, InGaP/GaAs HBT´s grown by MOCVD show a medium-term degradation in current gain of about 20%, with an activation energy of 0.64 eV. They also show a corresponding decrease in base resistance and an increase in turn-on voltage. InGaP/GaAs HBTs grown by GSMBE, however, do not show this degradation. SIMS measurements show a five times greater than GSMBE-epi hydrogen concentration of about 10/sup 19/ cm/sup -3/ in the base layer of the MOCVD-grown epi. The degradation can be explained by acceptor depassivation due to hydrogen out-diffusion from the epi during stress.

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; secondary ion mass spectroscopy; semiconductor device reliability; semiconductor growth; 0.64 eV; GSMBE; III-V semiconductors; InGaP-GaAs; MOCVD; SIMS measurements; acceptor depassivation; activation energy; base resistance; elevated-temperature bias stress; heterojunction bipolar transistors; medium-term degradation; out-diffusion; reliability; turn-on voltage; Degradation; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; MOCVD; Neodymium; Temperature; Thermal stresses; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.536288

Filename

536288