High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET´s grown by GSMBE

Author

Yo-Sheng Lin ; Shey-Shi Lu

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

17

Issue

9

fYear

1996

Firstpage

452

Lastpage

454

Abstract

The first Ga/sub 0.51/In/sub 0.49/P channel MESFETs grown on a (100) GaAs substrate by GSMBE have been fabricated. A high gate-to-drain breakdown voltage of 42 V with a high maximum current density (320 mA/mm) was achieved. This result demonstrates that high-breakdown voltage could be attained by using Ga/sub 0.51/In/sub 0.49/P as the channel material. We also measured a high-maximum oscillation frequency (f_max) of 30 GHz for a 1.5 μm gate-length device. This value is quite high compared with other high-breakdown-voltage GaAs MESFET´s or MISFET´s with the same gate length.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 1.5 micron; 30 GHz; 42 V; GSMBE; Ga/sub 0.51/In/sub 0.49/P; III-V semiconductors; MESFET; channel material; gate length; gate-to-drain breakdown voltage; maximum current density; maximum oscillation frequency; Breakdown voltage; Current density; Gallium arsenide; Hall effect; Heating; Intrusion detection; Leakage current; Lithography; MESFETs; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.536290

Filename

536290