• DocumentCode
    1367083
  • Title

    Single Event Effects in 90-nm Phase Change Memories

  • Author

    Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Pellizzer, F. ; Vela, M. ; Ferlet-Cavrois, V.

  • Author_Institution
    RREACT Group, Univ. di Padova, Padova, Italy
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    2755
  • Lastpage
    2760
  • Abstract
    Single event effects are investigated in 90-nm phase change memories. The cells are shown to be insensitive to heavy-ion strikes and will likely remain so for a few more generations. Possible physical mechanisms leading to upsets in future generations are discussed. Errors and functional interrupts, in addition to single event latch-up, were observed during read, word and buffer program due to strikes in the peripheral circuitry.
  • Keywords
    phase change memories; buffer program; heavy-ion strikes; peripheral circuitry; phase change memories; physical mechanisms; single event effects; single event latch-up; Degradation; Nonvolatile memory; Phase change materials; Phase change memory; Radiation effects; Non-volatile memories; phase change memories; single event effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2171719
  • Filename
    6068270
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1367083