DocumentCode :
1367138
Title :
Tools for probing `atomic¿ action: Device designers need sophisticated ways to examine the advanced structures they have created
Author :
Gibson, J.M.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Volume :
22
Issue :
12
fYear :
1985
Firstpage :
38
Lastpage :
44
Abstract :
The growth of thin films by vapor deposition, patterning by electron-beam lithography, and doping by low-energy ion implantation have opened the way to microelectronics on an incredibly fine scale. Newer microscopes that take advantage of the much lower wavelength associated with electrons are now available to build and study the new, minute electronic devices. The capabilities of the transmission electron microscope, the scanning transmission electron microscope, the scanning tunneling microscope, and the field ion microscope are surveyed. Problems posed by spherical aberration and by the need to stabilize the image are discussed. Attention is also given to the ability of high-resolution electron microscopes to provide information on interfaces.
Keywords :
aberrations; atomic structure; field emission electron microscopes; integrated circuit testing; scanning-transmission electron microscopes; transmission electron microscopes; tunnelling; doping; electron wavelengths; electron-beam lithography; field ion microscope; high-resolution electron microscopes; image stabilisation; interfaces; low-energy ion implantation; microelectronics; patterning; scanning transmission electron microscope; scanning tunneling microscope; spherical aberration; thin films; transmission electron microscope; vapor deposition; Image resolution; Lenses; Optical microscopy; Scanning electron microscopy; Transmission electron microscopy;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1985.6370726
Filename :
6370726
Link To Document :
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