Title :
An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)
Author :
Hefner, Allen R., Jr.
Author_Institution :
US Dept. of Commerce, Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the insulated gate bipolar transistor. The nonquasi-static analysis is necessary because the transport of electrons and holes are coupled for the low-gain, high-level injection conditions, and the quasi-neutral base width changes faster than the base transit speed for typical load circuit conditions. To verify that both of the nonquasi-static effects must be included, the predictions of the quasi-static and nonquasi-static models are compared with measured current- and voltage-switching waveforms. The comparisons are performed for different load circuit conditions and for different device base lifetimes
Keywords :
carrier lifetime; insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT; base lifetimes; base transit speed; current; electrons; holes; injection; load circuit; models; nonquasi-static analysis; power insulated gate bipolar transistor; quasi-neutral base width; semiconductor device modelling; switching; transient operation; voltage; Anodes; Bipolar transistors; Charge carrier processes; Coupling circuits; Insulated gate bipolar transistors; MOSFET circuits; NIST; Semiconductor process modeling; Transient analysis; Voltage;
Journal_Title :
Power Electronics, IEEE Transactions on
