Title :
Computer-aided modelling of discrete high-frequency transistors
Author :
Kumar, K.B. ; Pandharipande, V.M.
Author_Institution :
Radar & Commun. Centre, Indian Inst. of Technol., Kharagpur, India
fDate :
6/1/1988 12:00:00 AM
Abstract :
Linear models for high-frequency transistors (bipolar and MESFET) at different biasing conditions are described. The model for a bipolar (MESFET) transistor shows good agreement between the measured and simulated Y(z) parameters. A discrete high frequency transistor is represented as a combination of two transistors and the bias dependence of the parameters of both intrinsic and extrinsic transistors are determined. A fully-automated equivalent-circuit parameter extraction program to fit the measured two-port MESFET data optimally up to 18 GHz is developed.
Keywords :
Schottky gate field effect transistors; bipolar transistors; electronic engineering computing; equivalent circuits; semiconductor device models; solid-state microwave devices; 18 GHz; MESFET; bias dependence; biasing conditions; bipolar transistors; computer-aided modelling; discrete high-frequency transistors; extrinsic transistors; fully-automated equivalent-circuit parameter extraction program; intrinsic transistors; linear models;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings H
