A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate

Author

Mizutani, A. ; Hatori, N. ; Nishiyama, N. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

10

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

633

Lastpage

635

Abstract

We have demonstrated a GaAs (311)B vertical-cavity surface-emitting laser (VCSEL) with a threshold current as low as 250 μA, which is the lowest value ever reported for that on non-(100) oriented substrates. Also, the fabricated VCSEL shows a stable polarization state for wide during current ranges and a large polarization-mode suppression ratio over 30 dB between the [233] and [011] axis modes at 5 mA. The electrical specific resistance of 1.2×10/sup -4/ /spl Omega//spl middot/cm/sup -2/ at the threshold was reasonably low due to carbon autodoping to AlAs in a p-type distributed Bragg reflector (DBR).

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser stability; light polarisation; quantum well lasers; surface emitting lasers; 250 muA; 5 mA; AlAs; DBR laser diodes; GaAs; GaAs (311)B substrate; InGaAs MQW laser; InGaAs-GaAs; axis modes; carbon autodoping; electrical specific resistance; large polarization-mode suppression ratio; low-threshold polarization-controlled vertical-cavity surface-emitting laser; non-(100) oriented substrates; p-type distributed Bragg reflector; stable polarization state; threshold current; wide during current ranges; Distributed Bragg reflectors; Electric resistance; Gallium arsenide; MOCVD; Optical polarization; Semiconductor lasers; Substrates; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.669216

Filename

669216