Title :
642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer
Author :
Chang, S.J. ; Chang, C.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/1998 12:00:00 AM
Abstract :
For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LDs). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LDs with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm×800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature T0 of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; claddings; deformation; gallium compounds; indium compounds; laser transitions; quantum well lasers; tensile strength; 48 mA; 5 mum; 642 nm; 642-nm AlGaInP laser diodes; 800 mum; AlGaInP; TSBC layers; carrier confinement; characteristic temperature; gain-guided triple TSBC AlGaInP LD; mA threshold current; optical confinement; triple tensile strain barrier cladding layer; Capacitive sensors; Carrier confinement; Crystalline materials; Diode lasers; Lattices; Optical materials; Quantum well devices; Temperature; Tensile strain; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
