Title :
Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate
Author :
Ito, T. ; Yoshimoto, Naoto ; Magari, K. ; Sugiura, H.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
5/1/1998 12:00:00 AM
Abstract :
A high-performance tensile-strained InGaAs multi-quantum-well semiconductor optical amplifier (MQW-SOA) gate developed for wavelength-division-multiplexing (WDM) applications is reported. The -0.47% InGaAs-strained SOA gate has a very low polarization dependence of 0.3 dB over a driving current between 30 and 60 mA and a wide-input signal wavelength range from 1530 to 1580 nm. The fabrication tolerance of the mesa stripe width is very large, ranging from 1.0 to 1.75 μm. The MQW-SOA gate has an extinction ratio of more than 40 dB. The fiber-to-fiber lossless operation current is less than 50 mA over the fiber-amplifier gain band. The gating speed is less than 1 ns.
Keywords :
III-V semiconductors; amplifiers; chemical beam epitaxial growth; gallium arsenide; indium compounds; light polarisation; optical fabrication; optical fibre communication; optical fibre couplers; optical fibre losses; optical transmitters; quantum well lasers; wavelength division multiplexing; 1 ns; 1530 to 1580 nm; 30 to 60 mA; 50 mA; InGaAs; InGaAs MQW-SOA gate; InGaAs-strained SOA gate; MQW-SOA gate; driving current; extinction ratio; fabrication tolerance; fiber-amplifier gain band; fiber-to-fiber lossless operation current; gating speed; mesa stripe width; multi-quantum-well semiconductor optical amplifier; polarization dependence; wavelength-division-multiplexing; wide-band polarization-independent tensile-strained semiconductor optical amplifier; wide-input signal wavelength range; Extinction ratio; Gain measurement; Indium gallium arsenide; Optical fiber losses; Optical fiber polarization; Optical polarization; Quantum well devices; Semiconductor optical amplifiers; Tellurium; Wideband;
Journal_Title :
Photonics Technology Letters, IEEE
