The DEPFET pixel BIOSCOPE

Author

Neeser, W. ; Böcker, M. ; Buchholz, P. ; Fischer, P. ; Holl, P. ; Kemmer, J. ; Klein, P. ; Koch, H. ; Löcker, M. ; Lutz, G. ; Matthäy, H. ; Strüder, L. ; Trimp, M. ; Ulrici, J. ; Wermes, N.

Author_Institution

Phys. Inst., Bonn Univ., Germany

Volume

47

Issue

3

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

1246

Lastpage

1250

Abstract

The DEPFET pixel Bioscope system based on a DEPFET pixel matrix provides good spatial and energy resolution in real-time digital autoradiography. Due to its very low noise and a thin entrance window the online detection of tritium without vacuum or cooling is demonstrated for the first time. To achieve this milestone a p-channel junction field effect transistor on a fully depleted high ohmic silicon substrate (DEPFET) is used as unit cell for pixel detectors providing an excellent noise performance of 158 eV FWHM at 6 keV (12 e ENC) at room temperature (300 K). 64×64 DEPFET pixel matrices with square (50 μm×50 μm) or hexagonal (50 μm×42 μm) pixels have been developed and operated successfully. First measurements result in a homogeneous charge collection efficiency on the whole matrix area and a good linearity in the X-ray range from 5 keV to 60 keV. First images taken with the square and the hexagonal pixel matrices using an ⁵⁵Fe-source as well as a `proof of principle´ experiment for online ³H-detection are presented and discussed

Keywords

biological techniques; field effect transistors; radioisotope imaging; 158 eV; 300 K; 42 mum; 50 mum; 6 keV; ⁵⁵Fe-source; DEPFET pixel BIOSCOPE; Fe; H; Si; X-ray range; biological samples; biophysical research instrumentation; energy resolution; fully depleted high ohmic silicon substrate; hexagonal pixel matrix; homogeneous charge collection efficiency; online ³H-detection; p-channel junction field effect transistor; pixel detectors cell; real-time digital autoradiography; spatial resolution; thin entrance window; Area measurement; Charge measurement; Cooling; Current measurement; Detectors; Energy resolution; FETs; Real time systems; Silicon; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.856581

Filename

856581