Title :
Continuous-wave mid-infrared VCSELs
Author :
Bewley, W.W. ; Felix, C.L. ; Vurgaftman, I. ; Aifer, E.H. ; Meyer, J.R. ; Goldberg, L. ; Lindle, J.R. ; Chow, D.H. ; Selvig, E.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
5/1/1998 12:00:00 AM
Abstract :
We report the continuous-wave operation of an optically pumped mid-infrared (mid-IR) vertical-cavity surface-emitting laser (VCSEL). The active region consisting of type-II antimonide quantum wells with a "W" configuration occupies a cavity formed by a semiconductor bottom mirror and dielectric top mirror. The emission wavelength of 2.9 μm is nearly independent of temperature (d/spl lambda//dT/spl ap/0.09 nm/K) compared to type-II edge-emitters and the multimode linewidth is narrow (2.9 nm). At T=78 K, the threshold pump intensity is /spl ap/940 W/cm2, the peak output power from a 50-μm spot is 45 mW, and the differential power conversion efficiency is 4.5%. Lasing is observed up to T=160 K.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; optical pumping; quantum well lasers; surface emitting lasers; 160 K; 2.9 mum; 4.5 percent; 45 mW; 78 K; InAs-GaSb-InAs-AlSb; W configuration; active region; cavity; continuous-wave mid-infrared VCSEL; continuous-wave operation; dielectric top mirror; differential power conversion efficiency; emission wavelength; lasing; mid-IR laser; multimode linewidth; optically pumped mid-infrared laser; peak output power; semiconductor bottom mirror; temperature independence; threshold pump intensity; type-II antimonide quantum wells; type-II edge-emitters; vertical-cavity surface-emitting laser; Laser excitation; Mirrors; Optical pumping; Optical surface waves; Pump lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
