Title :
Cross-Gain Modulation in Quantum-Dot SOA at 1550 nm
Author :
Contestabile, Giampiero ; Maruta, Akihiro ; Sekiguchi, Shigeaki ; Morito, Ken ; Sugawara, Mitsuru ; Kitayama, Ken-ichi
Author_Institution :
Osaka Univ., Suita, Japan
Abstract :
We experimentally study the cross-gain modulation (XGM) in an InAs/InGaAsP/InP columnar quantum-dot semiconductor optical amplifier working in the 1550-nm spectral region. We report 12-nm wavelength conversion of 10, 20, 40, 80, and 160 Gb/s return-to-zero (RZ) signals. We find that pure XGM is effective for wavelength conversion without significant pattern effects up to around 40 Gb/s. At higher bit rates, distortion-free conversion can be obtained by exploiting jointly XGM and some cross-phase modulation that arises at the same time in the amplifier. This can be easily achieved by using a slightly blue-shifted output band-pass filter. By testing the signal integrity by means of the factor analysis, we also find that the XGM transfer function attenuates the input intensity noise. Finally, we show how the output inverse-RZ signals obtained in the XGM conversion can be format-converted back to RZ by side-band filtering.
Keywords :
III-V semiconductors; band-pass filters; gallium arsenide; indium compounds; optical filters; optical modulation; optical wavelength conversion; phase modulation; semiconductor optical amplifiers; semiconductor quantum dots; InAs-InGaAsP-InP; XGM transfer function; bit rate 10 Gbit/s; bit rate 160 Gbit/s; bit rate 20 Gbit/s; bit rate 40 Gbit/s; bit rate 80 Gbit/s; blue-shifted output band-pass filter; columnar quantum dot semiconductor optical amplifiers; cross-gain modulation; cross-phase modulation; distortion-free conversion; return-to-zero signals; side-band filtering; wavelength 12 nm; wavelength 1550 nm; wavelength conversion; Bandwidth; Optical modulation; Optical saturation; Optical wavelength conversion; Semiconductor optical amplifiers; Cross-gain modulation; quantum-dot; semiconductor optical amplifier; wavelength conversion;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2060714