DocumentCode :
1367393
Title :
Resistive Switching in 
Probed by a Metal–Insulator–Semiconductor Bipolar Transistor
Author :
Yalon, E. ; Gavrilov, A. ; Cohen, S. ; Mistele, D. ; Meyler, B. ; Salzman, J. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
33
Issue :
1
fYear :
2012
Firstpage :
11
Lastpage :
13
Abstract :
Resistive switching in thin HfO2 films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.
Keywords :
MIS devices; bipolar transistor switches; conduction bands; hafnium compounds; valence bands; HfO2; conduction band; conduction mechanisms; damage detector; electron injection; metal-insulator-semiconductor bipolar transistor; p-n junction; resistive switching; semiconductor valence band; Bipolar transistors; Hafnium compounds; Insulators; P-n junctions; Switches; Tunneling; Resistive random access memory; resistive switching (RS); tunneling emitter bipolar transistor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2171317
Filename :
6069527
Link To Document :
