Resistive Switching in $\\hbox {HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor

Author

Yalon, E. ; Gavrilov, A. ; Cohen, S. ; Mistele, D. ; Meyler, B. ; Salzman, J. ; Ritter, D.

Author_Institution

Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel

Volume

33

Issue

1

fYear

2012

Firstpage

11

Lastpage

13

Abstract

Resistive switching in thin HfO₂ films is studied using a metal-insulator-semiconductor bipolar transistor structure. Using this structure, electron injection into the semiconductor valence band can be distinguished from injection into the conduction band. In addition, the p-n junction serves as a sensitive detector of damage induced by the switching effect. The implications of the obtained experimental results on the validity of various conduction mechanisms through the insulator are discussed.

Keywords

MIS devices; bipolar transistor switches; conduction bands; hafnium compounds; valence bands; HfO₂; conduction band; conduction mechanisms; damage detector; electron injection; metal-insulator-semiconductor bipolar transistor; p-n junction; resistive switching; semiconductor valence band; Bipolar transistors; Hafnium compounds; Insulators; P-n junctions; Switches; Tunneling; Resistive random access memory; resistive switching (RS); tunneling emitter bipolar transistor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2171317

Filename

6069527

Resistive Switching in Probed by a Metal–Insulator–Semiconductor Bipolar Transistor

Yalon, E. ; Gavrilov, A. ; Cohen, S. ; Mistele, D. ; Meyler, B. ; Salzman, J. ; Ritter, D.

jour

Resistive Switching in $\\hbox {HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor