Title :
A novel simple IGBT model for power electronic systems EMI simulation
Author :
Dong Zhang ; Liang Kong ; Xuhui Wen
Author_Institution :
Univ. of Chinese Acad. of Sci., Beijing, China
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
Insulated Gate Bipolar Transistors (IGBTs) have been widely used in power electronic systems, such as switched mode power supplies, electric vehicles´ motor drives and so on. However, the high switching speed of the IGBT causes high levels of electromagnetic interference (EMI). This paper suggests a simple model with sufficient accuracy to predict the power electronics systems EMI levels. The predicted spectra of both voltage and current match the measurement results. Using the system time-domain simulation with the suggested model, the relationship between the layout of the converter and the EMI level is analyzed.
Keywords :
electromagnetic interference; insulated gate bipolar transistors; power semiconductor devices; EMI simulation; IGBT model; electromagnetic interference; insulated gate bipolar transistor; power electronic systems; Electromagnetic interference; Insulated gate bipolar transistors; Integrated circuit modeling; Load modeling; Switches; Time-domain analysis;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6941036
