DocumentCode :
1367734
Title :
Temperature Compensation of Silicon Resonators via Degenerate Doping
Author :
Samarao, Ashwin K. ; Ayazi, Farrokh
Author_Institution :
Robert Bosch Res. & Technol. Center, Palo Alto, CA, USA
Volume :
59
Issue :
1
fYear :
2012
Firstpage :
87
Lastpage :
93
Abstract :
This paper demonstrates the dependence of temperature coefficient of frequency (TCF) of silicon micromechanical resonators on charge carrier concentration. TCF compensation is demonstrated by degenerate doping of silicon bulk acoustic resonators (SiBARs) using both boron and aluminum dopants. The native TCF of -33×ppm/°C for silicon resistivity of >; 103 Ω · is shown to reduce to -1.5×;ppm/°C at ultralow resistivity of ~10×-4;Ω·cm using relatively slow diffusion-based boron doping. However, the faster thermomigration-based aluminum doping offers TCF reduction to as low as -2.7×;ppm/°C with much reduced processing time. A very high Q of 28 000 at 100 MHz is measured for a temperature-compensated SiBAR.
Keywords :
acoustic resonators; aluminium; boron; carrier density; micromechanical resonators; semiconductor doping; silicon; SiBAR; TCF compensation; aluminum dopant; boron dopant; charge carrier concentration; degenerate doping; diffusion-based boron doping; frequency 100 MHz; silicon bulk acoustic resonator; silicon micromechanical resonator; silicon resistivity; temperature coefficient-of-frequency; temperature compensation; thermomigration-based aluminum doping; Aluminum; Boron; Conductivity; Doping; Resonant frequency; Silicon; Substrates; Aluminum thermomigration; degenerate boron doping; silicon micromechanical resonators; temperature compensation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2172613
Filename :
6069577
Link To Document :
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