Title :
Fully monolithic four channel transmitter IC for RF/optical subcarrier multiplexed communications
Author :
Han, S. ; Lee, C.-H. ; Martinpour, B. ; Laskar, J. ; Blumenthal, D.J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
A compact four channel RF/optical subcarrier multiplexed (OSCM) transmitter MMIC has been implemented in a commercial 0.6 μm GaAs MESFET process. The designed MMIC consists of four voltage controlled oscillators (VCO) with a frequency range of 3.8-5.5 GHz for subcarrier generation and four modulators for on-off keying (OOK) subcarrier modulation. This MMIC supports up to 200 Mb/s data rate per each channel. This transmitter IC occupies a die area of 120×120 mil2. We present design and characterization of the first fully monolithic four channel transmitter IC for multichannel OSCM link applications.
Keywords :
III-V semiconductors; MESFET integrated circuits; amplitude shift keying; digital communication; field effect MMIC; gallium arsenide; microwave links; modulators; optical transmitters; subcarrier multiplexing; voltage-controlled oscillators; 0.6 micron; 200 Mbit/s; 3.8 to 5.5 GHz; GaAs; GaAs MESFET process; OOK subcarrier modulation; RF/optical subcarrier multiplexed communications; VCO; modulators; monolithic four channel transmitter IC; multichannel RF/optical SCM links; on-off keying; subcarrier generation; transmitter MMIC; voltage controlled oscillators; Gallium arsenide; MESFETs; MMICs; Monolithic integrated circuits; Optical modulation; Optical transmitters; Photonic integrated circuits; Radio frequency; Radiofrequency integrated circuits; Voltage-controlled oscillators;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
