Title :
A physical modeling method for NPT IGBTs verified by experiments
Author :
Jinlei Meng ; Puqi Ning ; Xuhui Wen
Author_Institution :
Univ. of Chinese Acad. of Sci., Beijing, China
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
This paper presents a physical modeling method for Non Punch Through (NPT) Insulated Gate Bipolar Transistors (IGBTs). The model is based on the solution to ambipolar diffusion equation (ADE) and can be achieved by engineering software MATLAB or PSPICE. The presented model is verified by experiments. With an interface between the presented model and thermal model of IGBT module, the model can be extended to thermo-electric model easily.
Keywords :
insulated gate bipolar transistors; ADE; MATLAB; NPT IGBT; PSPICE; ambipolar diffusion equation; engineering software; non punch through insulated gate bipolar transistors; physical modeling method; thermal model; thermoelectric model; Capacitance; Equations; Insulated gate bipolar transistors; Integrated circuit modeling; Load modeling; Mathematical model; Semiconductor device modeling; Insulated Gate Bipolar Transistor; MATLAB; ambipolar diffusion equation; physical model;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6941058
