DocumentCode
1367870
Title
Fully-depleted SOI CMOS for analog applications
Author
Colinge, Jean-Pierre
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
Volume
45
Issue
5
fYear
1998
fDate
5/1/1998 12:00:00 AM
Firstpage
1010
Lastpage
1016
Abstract
Fully-depleted (FD) SOI MOSFETs offer near-ideal properties for analog applications. In particular their high transconductance to drain current ratio allows one to obtain a higher gain than from bulk devices, and the reduced body effect permits one to fabricate more efficient pass gates. The excellent behavior of SOI MOSFETs at high temperature or at gigahertz frequencies is outlined as well
Keywords
CMOS analogue integrated circuits; silicon-on-insulator; FD SOI MOSFET; analog application; body effect; drain current; fully-depleted SOI CMOS; gain; gigahertz frequency operation; high temperature operation; pass gate; transconductance; Analog circuits; Analog integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; Capacitance; Frequency; Low voltage; MOSFET circuits; Temperature; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.669511
Filename
669511
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