Title :
Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
Author :
Raskin, Jean-Pierre ; Gillon, Renaud ; Chen, Jian ; Vanhoenacker-Janvier, Danielle ; Colinge, Jean-Pierre
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Belgium
fDate :
5/1/1998 12:00:00 AM
Abstract :
The maturation of low-cost silicon-on-insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static (NQS) small-signal model for MOSFETs. The extracted model is shown to be valid up to 40 GHz
Keywords :
MOSFET; calibration; microwave field effect transistors; semiconductor device models; silicon-on-insulator; 40 GHz; SOI MOSFET; analog model; calibration; device performance optimization; microwave frequency; nonquasi-static small-signal model; parameter extraction; probe; Calibration; Equivalent circuits; Integrated circuit measurements; MOSFET circuits; Microwave devices; Microwave frequencies; Microwave measurements; Microwave technology; Optimization; Silicon on insulator technology;
Journal_Title :
Electron Devices, IEEE Transactions on
