DocumentCode
1367886
Title
Noise contribution of the body resistance in partially-depleted SOI MOSFETs
Author
Faccio, Federico ; Anghinolfi, Francis ; Heijne, Erik H.M. ; Jarron, Pierre ; Cristoloveanu, Sorin
Author_Institution
CERN, Geneva, Switzerland
Volume
45
Issue
5
fYear
1998
fDate
5/1/1998 12:00:00 AM
Firstpage
1033
Lastpage
1038
Abstract
An additional noise component is observed in the noise spectrum of transistors in a partially-depleted (PD) medium-thickness SOI-CMOS technology. We identify the origin of this additional noise in the noisy resistance of the body film. This resistance, coupled to the gate capacitance, forms an RC filter and generates the hump-shape of the additional noise component. Several experimental observations that support this model are presented
Keywords
MOSFET; semiconductor device noise; silicon-on-insulator; CMOS transistor; RC filter; body resistance; gate capacitance; noise spectrum; partially-depleted SOI MOSFET; CMOS technology; Capacitance; Immune system; MOSFET circuits; Noise measurement; Semiconductor films; Silicon; Substrates; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.669519
Filename
669519
Link To Document