Title :
Advanced thin-film silicon-on-sapphire technology: microwave circuit applications
Author :
Johnson, Robb A. ; de la Houssaye, Paul R. ; Chang, Charles E. ; Chen, Pin-Fan ; Wood, Michael E. ; Garcia, Graham A. ; Lagnado, Isaac ; Asbeck, Peter M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
5/1/1998 12:00:00 AM
Abstract :
This paper reviews the prospects of thin-film silicon-on-sapphire (TFSOS) CMOS technology in microwave applications in the 1-5 GHz regime and beyond and presents the first demonstration of microwave integrated circuits based on this technology, MOSFET´s optimized for microwave use, with 0.5-μm optically defined gate lengths and a T-gate structure, have ft values of 25 GHz (14 GHz) and fmax values of 66 GHz (41 GHz) for n-channel (p-channel) devices and have noise figure values below 1 db at 2 GHz, some of the best reported performance characteristics of any silicon-based MOSFET´s to date. On-chip spiral inductors exhibit quality factors above ten. Circuit performance compares favorably with that of other CMOS-based technologies and approach performance levels similar to those obtained by silicon bipolar technologies. The results demonstrate the significant potential of this technology for microwave applications
Keywords :
CMOS integrated circuits; MMIC amplifiers; MMIC mixers; field effect MMIC; field effect transistor switches; inductors; integrated circuit technology; reviews; silicon-on-insulator; thin film transistors; 0.5 micron; 1 dB; 1 to 66 GHz; CMOSFETs; LNA; MMIC; Si-Al2O3; T-gate structure; T/R switch; microwave circuit applications; microwave integrated circuits; onchip spiral inductors; review; silicon-on-sapphire technology; thin-film SOS CMOS technology; Application specific integrated circuits; CMOS integrated circuits; CMOS technology; Integrated circuit noise; Integrated circuit technology; Microwave integrated circuits; Microwave technology; Semiconductor thin films; Thin film circuits; Thin film devices;
Journal_Title :
Electron Devices, IEEE Transactions on
