Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET´s

Author

Gámiz, Francisco ; López-villanueva, Juan A. ; Roldán, Juan B. ; Carceller, Juan E. ; Cartujo, Pedro

Author_Institution

Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain

Volume

45

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

1122

Lastpage

1126

Abstract

Electron mobility in extremely thin-film silicon-on-insulator (SOI) MOSFET´s has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parallel to the Si-SiO₂ interfaces is considered. The Boltzmann transport equation is solved by the Monte Carlo method. The contribution of phonon, surface-roughness at both interfaces, and Coulomb scattering has been considered. The mobility decrease that appears experimentally in devices with a silicon film thickness under 20 nm is satisfactorily explained by an increase in phonon scattering as a consequence of the greater confinement of the electrons in the silicon film

Keywords

Boltzmann equation; MOSFET; Monte Carlo methods; electron mobility; semiconductor device models; silicon-on-insulator; thin film transistors; Boltzmann transport equation; Coulomb scattering; Monte Carlo simulation; Si-SiO₂; Si-SiO₂ interface; drift electric field; electron confinement; electron distribution; electron mobility; electron transport; phonon scattering; quantum mechanics; surface roughness scattering; thin film SOI MOSFET; Computational modeling; Electron mobility; MOSFET circuits; Particle scattering; Phonons; Poisson equations; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.669557

Filename

669557