Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques

Author

Selmi, Luca ; Pavesi, Maura ; Wong, H. S Philip ; Acovic, Alexandre ; Sangiorgi, Enrico

Author_Institution

Dipt. di Elettronica, Bologna Univ., Italy

Volume

45

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

1135

Lastpage

1139

Abstract

This paper addresses the problem of hot-carrier degradation and lifetime monitoring in SOI MOSFETs by means of hot-carrier-induced luminescence measurements. The peculiar emission behavior of SOI devices is clarified over a broad range of bias conditions by means of comparison with that of BULK MOSFETs. It is shown that detailed analysis of hot-carrier luminescence measurements at different photon energies provides a noninvasive monitoring tool for various aspects of degradation, such as worst case bias conditions, threshold voltage shift, and variations of the electric field and hot-carrier population in the damaged region. The measured light intensity represents also a sensitive acceleration factor for the extrapolation of lifetimes to real operating conditions

Keywords

MOSFET; electroluminescence; hot carriers; semiconductor device reliability; silicon-on-insulator; SOI MOSFET; electric field; hot carrier degradation; hot carrier luminescence; lifetime monitoring; threshold voltage; Acceleration; Accelerometers; Condition monitoring; Degradation; Electric variables measurement; Energy measurement; Hot carriers; Luminescence; MOSFETs; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.669568

Filename

669568